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dc.contributor.authorUzunok, HY
dc.contributor.authorTutuncu, HM
dc.contributor.authorSrivastava, GP
dc.contributor.authorIpsara, E
dc.contributor.authorBasoglu, A
dc.date.accessioned2017-07-26T13:17:53Z
dc.date.issued2017-05-21
dc.description.abstractWe have presented the structural, elastic, electronic, phononic, and electron-phonon interaction properties of the La-based noncentrosymmetric superconductors, such as LaIrSi3, LaRhSi3, and LaPdSi3, by using the generalized gradient approximation of the density functional theory. The calculated elastic constants reveal the mechanical stability of all the studied compounds in their noncentrosymmetric structure, while the lack of inversion symmetry gives rise to lift the degeneracy of their electronic bands, except in the Γ-Z and X-P directions. The calculated Eliashberg spectral function shows that all phonon branches of these materials couple considerably with electrons, and thus, all of them make contribution to the average electron-phonon coupling parameter λ. Using the calculated values of λ and the logarithmically averaged phonon frequency ωln, the superconducting critical temperature Tc values for LaIrSi3, LaRhSi3, and LaPdSi3 are estimated to be 0.89, 2.56, and 2.40 K, respectively, which accord very well with their corresponding experimental values of 0.77, 2.16, and 2.60 K.en_GB
dc.description.sponsorshipThis work was supported by the Scientific and Technical Research Council of Turkey (TÜBİTAK) (Project No. MFAG-115F135).en_GB
dc.identifier.citationVol. 121 (19), article 193904en_GB
dc.identifier.doi10.1063/1.4983770
dc.identifier.urihttp://hdl.handle.net/10871/28648
dc.language.isoenen_GB
dc.publisherAIP Publishingen_GB
dc.rights.embargoreasonPublisher policyen_GB
dc.titleThe effect of spin orbit interaction on the physical properties of LaTSi3 (T = Ir, Pd, and Rh): First-principles calculationsen_GB
dc.typeArticleen_GB
dc.identifier.issn0021-8979
exeter.article-numberARTN 193904en_GB
dc.descriptionThis is the final version of the article. Available from AIP Publishing via the DOI in this record.en_GB
dc.identifier.journalJournal of Applied Physicsen_GB


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