Memristive Eﬀects in Oxygenated Amorphous Carbon Nanodevices
Le Gallo, M
© 2017 IOP Publishing Ltd
Reason for embargo
Under embargo until 13 December 2018 in compliance with publisher policy
Computing with resistive-switching (memristive) memory devices has shown much recent progress and offers an attractive route to circumvent the von-Neumann bottleneck, i.e. the separation of processing and memory, which limits the performance of conventional computer architectures. Due to their good scalability and nanosecond switching speeds, carbon-based resistive-switching memory devices could play an important role in this respect. However, devices based on elemental carbon, such as tetrahedral amorphous carbon or t-aC, typically suﬀer from a low cycling endurance. A material that has proven to be capable of combining the advantages of elemental carbon-based memories with simple fabrication methods and good endurance performance for binary memory applications is oxygenated amorphous carbon, or a-COx. Here, we examine the memristive capabilities of nanoscale a-COx devices, in particular their ability to provide the multilevel and accumulation properties that underpin computing type applications. We show the successful operation of nanoscale a-COx memory cells for both the storage of multilevel states (here 3-level) and for the provision of an arithmetic accumulator. We implement a base-16, or hexadecimal, accumulator and show how such a device can carry out hexadecimal arithmetic and simultaneously store the computed result in the self-same a-COx cell, all using fast (sub-10 ns) and low-energy (sub-pJ) input pulses.
This work was funded by the EU Research & Innovation project CareRAMM, grant no. 309980
This is the author accepted manuscript. The final version is available from IOP Publishing via the DOI in this record.
Vol. 29 (3), article 035201
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