dc.contributor.author | Bachmann, T | |
dc.contributor.author | Koelmans, WW | |
dc.contributor.author | Jonnalagadda, P | |
dc.contributor.author | Le Gallo, M | |
dc.contributor.author | Santini, C | |
dc.contributor.author | Sebastian, A | |
dc.contributor.author | Eleftheriou, E | |
dc.contributor.author | Craciun, MF | |
dc.contributor.author | Wright, CD | |
dc.date.accessioned | 2018-01-26T09:51:14Z | |
dc.date.issued | 2017-12-13 | |
dc.description.abstract | Computing with resistive-switching (memristive) memory devices has shown much recent progress and offers an attractive route to circumvent the von-Neumann bottleneck, i.e. the separation of processing and memory, which limits the performance of conventional computer architectures. Due to their good scalability and nanosecond switching speeds, carbon-based resistive-switching memory devices could play an important role in this respect. However, devices based on elemental carbon, such as tetrahedral amorphous carbon or t-aC, typically suffer from a low cycling endurance. A material that has proven to be capable of combining the advantages of elemental carbon-based memories with simple fabrication methods and good endurance performance for binary memory applications is oxygenated amorphous carbon, or a-COx. Here, we examine the memristive capabilities of nanoscale a-COx devices, in particular their ability to provide the multilevel and accumulation properties that underpin computing type applications. We show the successful operation of nanoscale a-COx memory cells for both the storage of multilevel states (here 3-level) and for the provision of an arithmetic accumulator. We implement a base-16, or hexadecimal, accumulator and show how such a device can carry out hexadecimal arithmetic and simultaneously store the computed result in the self-same a-COx cell, all using fast (sub-10 ns) and low-energy (sub-pJ) input pulses. | en_GB |
dc.description.sponsorship | This work was funded by the EU Research & Innovation project CareRAMM, grant no. 309980 | en_GB |
dc.identifier.citation | Vol. 29 (3), article 035201 | en_GB |
dc.identifier.doi | 10.1088/1361-6528/aa9a18 | |
dc.identifier.uri | http://hdl.handle.net/10871/31189 | |
dc.language.iso | en | en_GB |
dc.publisher | IOP Publishing | en_GB |
dc.relation.url | https://www.ncbi.nlm.nih.gov/pubmed/29130890 | en_GB |
dc.rights.embargoreason | Under embargo until 13 December 2018 in compliance with publisher policy | en_GB |
dc.rights | © 2017 IOP Publishing Ltd | en_GB |
dc.subject | amorphous carbon memristors | en_GB |
dc.subject | beyond von Neumann computing | en_GB |
dc.subject | carbon electronics | en_GB |
dc.subject | carbon memories | en_GB |
dc.subject | non-volatile carbon memory devices | en_GB |
dc.subject | oxygenated amorphous carbon | en_GB |
dc.title | Memristive Effects in Oxygenated Amorphous Carbon Nanodevices | en_GB |
dc.type | Article | en_GB |
exeter.place-of-publication | England | en_GB |
dc.description | This is the author accepted manuscript. The final version is available from IOP Publishing via the DOI in this record. | en_GB |
dc.identifier.journal | Nanotechnology | en_GB |