| dc.contributor.author | Sanctis, AD | |
| dc.contributor.author | Amit, I | |
| dc.contributor.author | Hepplestone, SP | |
| dc.contributor.author | Craciun, MF | |
| dc.contributor.author | Russo, S | |
| dc.date.accessioned | 2018-04-11T09:36:24Z | |
| dc.date.issued | 2018-04-25 | |
| dc.description.abstract | The control of charges in a circuit due to an external electric field is ubiquitous to the exchange, storage and manipulation of information in a wide range of applications, from electronic circuits to synapses in neural cells. Conversely, the ability to grow clean interfaces between materials has been a stepping stone for engineering built-in electric fields largely exploited in modern photovoltaics and opto-electronics. The emergence of atomically thin semiconductors is now enabling new ways to attain electric fields and unveil novel charge transport mechanisms. Here, we report the first direct electrical observation of the inverse charge-funnel effect enabled by deterministic and spatially resolved strain-induced electric fields in a thin sheet of HfS2. We demonstrate that charges driven by these spatially varying electric fields in the channel of a phototransistor lead to a 350% enhancement in the responsivity. These findings could enable the informed design of highly efficient photovoltaic cells. | en_GB |
| dc.description.sponsorship | S. Russo and M.F. Craciun acknowledge
financial support from EPSRC (Grant no. EP/K017160/1, EP/K010050/1,
EP/M001024/1, EP/M002438/1), from Royal Society international Exchanges Scheme
2016/R1, from European Commission (FP7-ICT-2013-613024-GRASP) and from The
Leverhulme trust (grant title ”Quantum Revolution” and ”Quantum Drums”). I. Amit
received funding from the People Programme (Marie Curie Actions) of the European
Union’s Eighth Framework Programme Horizon 2020 under REA grant agreement number
701704. S. Hepplestone acknowledges the use of the resources allocated by the MCC
via membership of the UK’s HEC Materials Chemistry Consortium, funded by EPSRC
(EP/L000202), this work used the ARCHER UK National Supercomputing Service. | en_GB |
| dc.identifier.citation | Vol. 9, article 1652 | en_GB |
| dc.identifier.doi | 10.1038/s41467-018-04099-7 | |
| dc.identifier.uri | http://hdl.handle.net/10871/32411 | |
| dc.language.iso | en | en_GB |
| dc.publisher | Springer Nature | en_GB |
| dc.rights | © The Author(s) 2018. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. | |
| dc.title | Strain-engineered inverse charge-funnelling in layered semiconductors | en_GB |
| dc.type | Article | en_GB |
| dc.description | This is the author accepted manuscript. The final version is available from Springer Nature via the DOI in this record. | en_GB |
| dc.identifier.journal | Nature Communications | en_GB |
