dc.contributor.author | Abdelsalam, H | |
dc.contributor.author | Saroka, VA | |
dc.contributor.author | Lukyanchuk, I | |
dc.contributor.author | Portnoi, ME | |
dc.date.accessioned | 2018-10-29T12:00:57Z | |
dc.date.issued | 2018-09-25 | |
dc.description.abstract | Triangular and hexagonal multilayer phosphorene quantum dots with armchair and zigzag terminations are investigated with the orthogonal tight-binding model. The effect of increasing the number of layers is revealed. The obtained results show that in a small size multilayer quantum dot, the edge states are as sensitive to the out-of-plane external electric fields as the edge states in a single layer dot to the in-plane external electric fields. The investigated optical absorption cross sections show that armchair phosphorene quantum dots have a regular behavior which should be useful for infrared detectors. In particular, it was found that in hexagonal armchair phosphorene dots, absorption peaks can be increased, decreased, or totally removed from the low-energy region depending on the orientation of the applied electric field. The effect of spurious doping can suppress the transitions < 0.4 eV, while the effect of the finite temperature is almost negligible. | en_GB |
dc.description.sponsorship | This work was supported by the EU FP7 ITN NOTEDEV (FP7-607521), EU H2020 RISE project CoExAN (H2020-644076), and FP7 IRSES projects CANTOR (FP7-612285). The work of M.E.P. was financially supported by the Government of the Russian Federation through the ITMO Fellowship and Professorship Program. | en_GB |
dc.identifier.citation | Vol. 124 (12), article 124303 | en_GB |
dc.identifier.doi | 10.1063/1.5048697 | |
dc.identifier.uri | http://hdl.handle.net/10871/34531 | |
dc.language.iso | en | en_GB |
dc.publisher | AIP Publishing | en_GB |
dc.title | Multilayer phosphorene quantum dots in an electric field: Energy levels and optical absorption | en_GB |
dc.type | Article | en_GB |
dc.date.available | 2018-10-29T12:00:57Z | |
dc.identifier.issn | 0021-8979 | |
dc.description | This is the author accepted manuscript. The final version is available from AIP Publishing via the DOI in this record | en_GB |
dc.identifier.journal | Journal of Applied Physics | en_GB |