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dc.contributor.authorGemo, E
dc.contributor.authorGarcía-Cuevas Carrillo, S
dc.contributor.authorRuiz De Galarreta Fanjul, C
dc.contributor.authorHayat, H
dc.contributor.authorYoungblood, N
dc.contributor.authorBaldycheva, A
dc.contributor.authorBhaskaran, H
dc.contributor.authorPernice, WHP
dc.contributor.authorWright, CD
dc.date.accessioned2019-08-16T13:15:38Z
dc.date.issued2019-08-15
dc.description.abstractIntegrated phase-change photonic memory devices offer a novel route to non-volatile storage and computing that can be carried out entirely in the optical domain, obviating the necessity for time and energy consuming opto-electrical conversions. Such memory devices generally consist of integrated waveguide structures onto which are fabricated small phase-change memory cells. Switching these cells between their amorphous and crystalline states modifies significantly the optical transmission through the waveguide, so providing memory, and computing, functionality. To carry out such switching, optical pulses are sent down the waveguide, coupling to the phase-change cell, heating it up, and so switching it between states. While great strides have been made in the development of integrated phase-change photonic devices in recent years, there is always a pressing need for faster switching times, lower energy consumption and a smaller device footprint. In this work, therefore, we propose the use of plasmonic enhancement of the light-matter interaction between the propagating waveguide mode and the phase-change cell as a means to faster, smaller and more energy-efficient devices. In particular, we propose a form of plasmonic dimer nanoantenna of significantly sub-micron size that, in simulations, offers significant improvements in switching speeds and energies. Write/erase speeds in the range 2 to 20 ns and write/erase energies in the range 2 to 15 pJ were predicted, representing improvements of one to two orders of magnitude when compared to conventional device architectures.en_GB
dc.description.sponsorshipEngineering and Physical Sciences Research Council (EPSRC)en_GB
dc.identifier.citationVol. 27 (17), pp. 24724 - 24737en_GB
dc.identifier.doi10.1364/OE.27.024724
dc.identifier.grantnumber780848en_GB
dc.identifier.urihttp://hdl.handle.net/10871/38358
dc.language.isoenen_GB
dc.publisherOptical Society of America (OSA)en_GB
dc.rights© 2019. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.en_GB
dc.titlePlasmonically-enhanced all-optical integrated phase-change memoryen_GB
dc.typeArticleen_GB
dc.date.available2019-08-16T13:15:38Z
dc.identifier.issn1094-4087
dc.descriptionThis is the final version. Available on open access from the Optical Society of America via the DOI in this record.en_GB
dc.identifier.journalOptics Expressen_GB
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_GB
dcterms.dateAccepted2019-07-26
exeter.funder::Engineering and Physical Sciences Research Council (EPSRC)en_GB
rioxxterms.versionVoRen_GB
rioxxterms.licenseref.startdate2019-08-15
rioxxterms.typeJournal Article/Reviewen_GB
refterms.dateFCD2019-08-16T12:06:32Z
refterms.versionFCDVoR
refterms.panelBen_GB


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© 2019. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
Except where otherwise noted, this item's licence is described as © 2019. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.