Atomically thin quantum light-emitting diodes
Palacios-Berraquero, C; Barbone, M; Kara, DM; et al.Chen, X; Goykhman, I; Yoon, D; Ott, AK; Beitner, J; Watanabe, K; Taniguchi, T; Ferrari, AC; Atatüre, M
Date: 26 September 2016
Journal
Nature Communications
Publisher
Nature Research
Publisher DOI
Abstract
Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising ...
Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.
Engineering
Faculty of Environment, Science and Economy
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