The Design of Re-writeable Ultra-High Density Scanning-Probe Phase-Change Memories
Wright, C. David; Wang, Lei; Shah, P.; et al.Aziz, Mustafa M.; Varesi, E.; Bez, R.; Moroni, M.; Cazzaniga, F.
Date: 25 October 2010
Article
Journal
IEEE Transactions on Nanotechnology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publisher DOI
Abstract
A systematic design of practicable media suitable for rewritable, ultrahigh density (>1Tbit/sq.in.), high data rate (>1Mbit/s/tip) scanning-probe phase-change memories is presented. The basic design requirements were met by a Si/TiN/Ge 2 Sb 2 Te 5 (GST)/diamond-like carbon structure, with properly tailored electrical and thermal ...
A systematic design of practicable media suitable for rewritable, ultrahigh density (>1Tbit/sq.in.), high data rate (>1Mbit/s/tip) scanning-probe phase-change memories is presented. The basic design requirements were met by a Si/TiN/Ge 2 Sb 2 Te 5 (GST)/diamond-like carbon structure, with properly tailored electrical and thermal conductivities. Various alternatives for providing rewritability were investigated. In the first case, amorphous marks were written into a crystalline starting phase and subsequently erased by recrystallization, as in other already established phase-change memory technologies. Results imply that this approach is also appropriate for probe-based memories. However, experimentally, the successful writing of amorphous bits using scanning electrical probes has not been widely reported. In light of this, a second approach has been studied, that of writing crystalline bits in an amorphous starting matrix, with subsequent erasure by reamorphization. With conventional phase-change materials, such as continuous films of GST, this approach invariably leads to the formation of a crystalline “halo” surrounding the erased (reamorphized) region, with severe adverse consequences on the achievable density. Suppression of the “halo” was achieved using patterned media or slow-growth phase-change media, with the latter seemingly more viable
Engineering
Faculty of Environment, Science and Economy
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