dc.contributor.author | Wright, C. David | |
dc.contributor.author | Wang, Lei | |
dc.contributor.author | Shah, P. | |
dc.contributor.author | Aziz, Mustafa M. | |
dc.contributor.author | Varesi, E. | |
dc.contributor.author | Bez, R. | |
dc.contributor.author | Moroni, M. | |
dc.contributor.author | Cazzaniga, F. | |
dc.date.accessioned | 2013-06-07T10:19:38Z | |
dc.date.issued | 2010-10-25 | |
dc.description.abstract | A systematic design of practicable media suitable for rewritable, ultrahigh density (>1Tbit/sq.in.), high data rate (>1Mbit/s/tip) scanning-probe phase-change memories is presented. The basic design requirements were met by a Si/TiN/Ge 2 Sb 2 Te 5 (GST)/diamond-like carbon structure, with properly tailored electrical and thermal conductivities. Various alternatives for providing rewritability were investigated. In the first case, amorphous marks were written into a crystalline starting phase and subsequently erased by recrystallization, as in other already established phase-change memory technologies. Results imply that this approach is also appropriate for probe-based memories. However, experimentally, the successful writing of amorphous bits using scanning electrical probes has not been widely reported. In light of this, a second approach has been studied, that of writing crystalline bits in an amorphous starting matrix, with subsequent erasure by reamorphization. With conventional phase-change materials, such as continuous films of GST, this approach invariably leads to the formation of a crystalline “halo” surrounding the erased (reamorphized) region, with severe adverse consequences on the achievable density. Suppression of the “halo” was achieved using patterned media or slow-growth phase-change media, with the latter seemingly more viable | en_GB |
dc.identifier.citation | Vol. 10 (4), pp. 900 - 912 | en_GB |
dc.identifier.doi | 10.1109/TNANO.2010.2089638 | |
dc.identifier.uri | http://hdl.handle.net/10871/9907 | |
dc.language.iso | en | en_GB |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_GB |
dc.subject | antimony compounds | en_GB |
dc.subject | chalcogenide glasses | en_GB |
dc.subject | diamond-like carbon | en_GB |
dc.subject | electrical conductivity | en_GB |
dc.subject | elemental semiconductors | en_GB |
dc.subject | germanium compounds | en_GB |
dc.subject | phase change materials | en_GB |
dc.subject | phase change memories | en_GB |
dc.subject | recrystallisation | en_GB |
dc.subject | silicon | en_GB |
dc.subject | tellurium compounds | en_GB |
dc.subject | thermal conductivity | en_GB |
dc.subject | titanium compounds | en_GB |
dc.subject | GeSbTe | en_GB |
dc.subject | phase-change RAM | en_GB |
dc.subject | scanning-probe memories | en_GB |
dc.title | The Design of Re-writeable Ultra-High Density Scanning-Probe Phase-Change Memories | en_GB |
dc.type | Article | en_GB |
dc.date.available | 2013-06-07T10:19:38Z | |
dc.identifier.issn | 1536-125X | |
dc.description | Copyright © 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. | en_GB |
dc.identifier.eissn | 1941-0085 | |
dc.identifier.journal | IEEE Transactions on Nanotechnology | en_GB |