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dc.contributor.authorWright, C. David
dc.contributor.authorWang, Lei
dc.contributor.authorShah, P.
dc.contributor.authorAziz, Mustafa M.
dc.contributor.authorVaresi, E.
dc.contributor.authorBez, R.
dc.contributor.authorMoroni, M.
dc.contributor.authorCazzaniga, F.
dc.date.accessioned2013-06-07T10:19:38Z
dc.date.issued2010
dc.description.abstractA systematic design of practicable media suitable for rewritable, ultrahigh density (>;1Tbit/sq.in.), high data rate (>;1Mbit/s/tip) scanning-probe phase-change memories is presented. The basic design requirements were met by a Si/TiN/Ge2Sb2Te5 (GST)/diamond-like carbon structure, with properly tailored electrical and thermal conductivities. Various alternatives for providing rewritability were investigated. In the first case, amorphous marks were written into a crystalline starting phase and subsequently erased by recrystallization, as in other already established phase-change memory technologies. Results imply that this approach is also appropriate for probe-based memories. However, experimentally, the successful writing of amorphous bits using scanning electrical probes has not been widely reported. In light of this, a second approach has been studied, that of writing crystalline bits in an amorphous starting matrix, with subsequent erasure by reamorphization. With conventional phase-change materials, such as continuous films of GST, this approach invariably leads to the formation of a crystalline “halo” surrounding the erased (reamorphized) region, with severe adverse consequences on the achievable density. Suppression of the “halo” was achieved using patterned media or slow-growth phase-change media, with the latter seemingly more viable.en_GB
dc.identifier.citationVol. 10 (4), pp. 900 - 912en_GB
dc.identifier.doi10.1109/TNANO.2010.2089638
dc.identifier.urihttp://hdl.handle.net/10871/9907
dc.language.isoenen_GB
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_GB
dc.relation.urlhttp://dx.doi.org/10.1109/TNANO.2010.2089638en_GB
dc.subjectantimony compoundsen_GB
dc.subjectchalcogenide glassesen_GB
dc.subjectdiamond-like carbonen_GB
dc.subjectelectrical conductivityen_GB
dc.subjectelemental semiconductorsen_GB
dc.subjectgermanium compoundsen_GB
dc.subjectphase change materialsen_GB
dc.subjectphase change memoriesen_GB
dc.subjectrecrystallisationen_GB
dc.subjectsiliconen_GB
dc.subjecttellurium compoundsen_GB
dc.subjectthermal conductivityen_GB
dc.subjecttitanium compoundsen_GB
dc.subjectGeSbTeen_GB
dc.subjectphase-change RAMen_GB
dc.subjectscanning-probe memoriesen_GB
dc.titleThe Design of Re-writeable Ultra-High Density Scanning-Probe Phase-Change Memoriesen_GB
dc.typeArticleen_GB
dc.date.available2013-06-07T10:19:38Z
dc.identifier.issn1536-125X
dc.descriptionnotes: First design of a practicable 1 Tera-bit-per-square-inch re-writable phase-change probe storage system. Co-authors from Europe's largest memory device manufacturer, Numonyx-Micron, Agrate Brianza, Italy (see www.micron.com/innovations/pcm.html). Led to invited presentation for Wright at EPCOS 2010 (European Phase Change and Ovonic Science Symposium) in Milan (www.epcos.org). Carried out under auspices of EU €9.5M Project 'ProTeM' (Probe-base Terabyte Memories) led (co-ordinated) by Wright and involving other world-leading partners such as IBM Zurich, CEA-LETI Grenoble, RWTH-Aachen, Fraunhofer Itzehoe and others. Verification contact [rbez@micron.com]en_GB
dc.descriptionCopyright © 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en_GB
dc.identifier.eissn1941-0085
dc.identifier.journalIEEE Transactions on Nanotechnologyen_GB


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