Reduction of carrier mobility in semiconductors caused by charge-charge interactions
Hendry, Euan; Koeberg, Mattijs; Pijpers, J.; et al.Bonn, Mischa
Date: 13 June 2007
Article
Journal
Physical Review B
Publisher
American Physical Society
Publisher DOI
Abstract
We investigate the effect of charge-charge interactions on carrier mobility in titanium dioxide (TiO2) and silicon (Si) using terahertz spectroscopy. Charge scattering times and plasma frequencies are directly determined as a function of charge density. In Si, a linear increase in scattering rate for densities exceeding 1021 m−3 is ...
We investigate the effect of charge-charge interactions on carrier mobility in titanium dioxide (TiO2) and silicon (Si) using terahertz spectroscopy. Charge scattering times and plasma frequencies are directly determined as a function of charge density. In Si, a linear increase in scattering rate for densities exceeding 1021 m−3 is attributed to electron-hole scattering. In contrast, in TiO2, charge-charge interactions are suppressed due to dielectric screening, highlighting the vastly different dielectric properties for these two materials.
Physics and Astronomy
Faculty of Environment, Science and Economy
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