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Reduction of carrier mobility in semiconductors caused by charge-charge interactions
University of Exeter; FOM Institute for Atomic and Molecular Physics, Amsterdam
Physical Review B
American Physical Society
We investigate the effect of charge-charge interactions on carrier mobility in titanium dioxide (TiO2) and silicon (Si) using terahertz spectroscopy. Charge scattering times and plasma frequencies are directly determined as a function of charge density. In Si, a linear increase in scattering rate for densities exceeding 1021 m−3 is attributed to electron-hole scattering. In contrast, in TiO2, charge-charge interactions are suppressed due to dielectric screening, highlighting the vastly different dielectric properties for these two materials.
Euan Hendry, M. Koeberg, J. Pijpers, and M. Bonn, Physical Review B, Vol. 75, article 233202 (2007). "Copyright © 2007 by the American Physical Society."
75 (23), article 233202