Evidence for hot electron magnetocurrent in a double barrier tunnel junction device
Applied Physics Letters
Hot electron transport has been studied in three terminal Ta/TaOx/Co/AlOx/Ni81Fe19 structures fabricated by magnetron sputtering through shadow masks. With the Co base and Ta collector connected together via a small resistor, the collector current contains contributions first from hot electrons injected from the Ni81Fe19 emitter, and second from a geometrical artifact that leads to tunneling from the Fermi level in the base. Both sources of collector current lead to a room temperature magnetocurrent effect. The hot electron contribution begins to dominate as the emitter-base voltage −Veb exceeds 0.3 V.
Copyright © 2005 American Institute of Physics
Vol. 87 (23), article 232504