| dc.contributor.author | Ladak, S. | en_GB |
| dc.contributor.author | Hicken, R.J. | en_GB |
| dc.date.accessioned | 2013-01-24T15:21:16Z | en_GB |
| dc.date.accessioned | 2013-03-20T13:14:42Z | |
| dc.date.issued | 2005-12-01 | en_GB |
| dc.description.abstract | Hot electron transport has been studied in three terminal Ta/TaOx/Co/AlOx/Ni81Fe19 structures fabricated by magnetron sputtering through shadow masks. With the Co base and Ta collector connected together via a small resistor, the collector current contains contributions first from hot electrons injected from the Ni81Fe19 emitter, and second from a geometrical artifact that leads to tunneling from the Fermi level in the base. Both sources of collector current lead to a room temperature magnetocurrent effect. The hot electron contribution begins to dominate as the emitter-base voltage −Veb exceeds 0.3 V. | en_GB |
| dc.identifier.citation | Vol. 87 (23), article 232504 | en_GB |
| dc.identifier.doi | 10.1063/1.2140480 | en_GB |
| dc.identifier.uri | http://hdl.handle.net/10036/4202 | en_GB |
| dc.subject | tantalum | en_GB |
| dc.subject | tantalum compounds | en_GB |
| dc.subject | cobalt | en_GB |
| dc.subject | aluminium compounds | en_GB |
| dc.subject | nickel alloys | en_GB |
| dc.subject | iron alloys | en_GB |
| dc.subject | hot carriers | en_GB |
| dc.subject | magnetic tunnelling | en_GB |
| dc.subject | sputtering | en_GB |
| dc.subject | masks | en_GB |
| dc.subject | Fermi level | en_GB |
| dc.title | Evidence for hot electron magnetocurrent in a double barrier tunnel junction device | en_GB |
| dc.type | Article | en_GB |
| dc.date.available | 2013-01-24T15:21:16Z | en_GB |
| dc.date.available | 2013-03-20T13:14:42Z | |
| dc.identifier.issn | 0003-6951 | en_GB |
| dc.description | Copyright © 2005 American Institute of Physics | en_GB |
| dc.identifier.eissn | 1077-3118 | en_GB |
| dc.identifier.journal | Applied Physics Letters | en_GB |
